IXFH22N55 mosfet equivalent, hiperfet power mosfet.
* International standard packages JEDEC TO-247 AD
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching .
1.13/10 Nm/lb.in. 6 g
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Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ..
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