* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4500V~ Electrical Isolation
* Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages
* High Voltage Package
* Easy to Mount
* Space Savings
* High Power Density Applicati
IXTF1N450 Datasheet (148.47 KB)
IXTF1N450
IXYS
148.47 KB
High voltage power mosfet.
High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N450 VDSS ID25 RDS(on) = 4500V = 0.9A 80 ISOPLUS i4-PakT.
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