* z z z z z z V V V V A A A A A Ec G Ec C G = Gate, C = Collector, E = Emitter c either emitter terminal can be used as Main or Kelvin Emitter VGE = 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C Mounting Torque Terminal Connection Torque Optimized for Low Switching Losses Square RBS
IXGN82N120C3H1 Datasheet (170.28 KB)
IXGN82N120C3H1
IXYS Corporation
170.28 KB
High-speed pt igbt.
Advance Technical Information GenX3TM 1200V IGBT w/ Diode High-Speed PT IGBT for 20-50 kHz Switching IXGN82N120C3H1 VCES IC110 VCE(sat) = 1200V = .
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