* z International Standard Packages z Low RDS (on) HDMOSTM Process z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Low Package Inductance - Easy to Drive and to Protect Advantages z Easy to Mount z Space Savings z High Power Density © 2013 IXYS CORPORATION, All Rights Reserved DS94535L(
IXTH11P50 Datasheet (130.12 KB)
IXTH11P50
IXYS Corporation
130.12 KB
P-channel mosfet.
Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTH11P50 IXTT11P50 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL Tsold Md W.
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