2SB772 Silicon PNP Power Transistors

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
High Collector Current -IC= -3A. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min). Good Linearity of hFE. Low Saturati.

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Datasheet Specifications

Part number: 2SB772
Manufacturer: Inchange Semiconductor
File Size: 213.69 KB
Datasheet: 2SB772_InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistors

Applications

* Designed for use in the output stage of 3 watts audio amp- lifier, voltage regulator, DC-DC converter and relay driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -

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2SB772 Silicon PNP Power Transistors Inchange Semiconductor

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