Datasheet Details
| Part number | 2SB772 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.69 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet |
 2SB772 Datasheet
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| Part number | 2SB772 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.69 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet |
2SB772 Datasheet
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·High Collector Current -IC= -3A ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -30V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD882 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in the output stage of 3 watts audio amp- lifier, voltage regulator, DC-DC converter and relay driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -7 A 10 W 1 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB772 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB772 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -2A;
IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SB772 | MEDIUM POWER LOW-VOLTAGE TRANSISTOR | Unisonic Technologies |
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2SB772 | PNP MEDIUM POWER TRANSISTOR | ST Microelectronics |
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2SB772 | PNP Silicon Power Transistor | Kexin |
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