Datasheet Details
| Part number | 2SB821 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 141.95 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet |
 2SB821 Datasheet
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| Part number | 2SB821 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 141.95 KB |
| Description | Silicon PNP Power Transistors |
| Datasheet |
2SB821 Datasheet
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Designed for use in audio amplifier, voltage regulator, DC-DC converter and relay driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -300 250 125 mA mW ℃ Tstg Storage Temperature Range -55~125 ℃ isc website：www.iscsemi.com1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SB821 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA ;
IE= 0 V(BR)
INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product.
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