Datasheet Details
| Part number | 2SD1587 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 274.79 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1587-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1587 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 274.79 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1587-InchangeSemiconductor.pdf |
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·High Collector Current:: IC= 2.0A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 500mA ·Complement to Type 2SB1096 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power supplies or a variety of drives in audio and other equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 2.0 A ICM Collector Current-Peak 3.0 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.0 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1587 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA;
IB= 50mA ICBO Collector Cutoff Current VCB= 150V;
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