Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A - plements the 2SB1184 - Good Linearity of hFE - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation.
| Part Number | Manufacturer | Description |
|---|---|---|
| 2SD1760 | Galaxy Microelectronics | NPN Silicon Epitaxial Planar Transistor |
| 2SD1760 | SeCoS Halbleitertechnologie GmbH | NPN Epitaxial Planar Silicon Transistor |
| 2SD1766 | AiT Components | NPN MEDIUM POWER TRANSISTOR |
| 2SD1763 | ROHM | Power Transistor |
| 2SD1766 | ROHM | Medium Power Transistor |
| 2SD1768S | ROHM | Power Transistor |
| 2SD1769 | Sanken | Silicon NPN Transistor |
| 2SD1762 | Galaxy Microelectronics | Power Transistor |
| D1761 | ROHM | 2SD1761 |
| 2SD1764 | ROHM | Medium Power Transistor |
