Datasheet Details
| Part number | 2SD1760 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.86 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2SD1760 Datasheet
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| Part number | 2SD1760 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.86 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2SD1760 Datasheet
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·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A ·Complements the 2SB1184 ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 4.5 A PC Collector Power Dissipation 15 W TJ Junction Temperature Tstg Storage Temperature Range 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1760 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 200mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50uA;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1760.
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