| Part number | BUT11AI |
|---|---|
| Datasheet | BUT11AI-InchangeSemiconductor.pdf |
| File Size | 209.81 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
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1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BUT11AI TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 450 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BUT11AI | Silicon Diffused Power Transistor | NXP |
 |
BUT11A | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | STMicroelectronics |
|
BUT11A | Silicon diffused power transistors | NXP |
 |
BUT11A | SILICON POWER TRANSISTOR | SavantIC |
 |
BUT11A | High Voltage Fast-switching NPN Power Transistor | nELL |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BUT11FI | Silicon NPN Power Transistor |
| BUT21B | Silicon NPN Power Transistor |
| BUT21BF | Silicon NPN Power Transistor |
| BUT21C | Silicon NPN Power Transistor |
| BUT21CF | Silicon NPN Power Transistor |
| BUT93 | Silicon NPN Power Transistor |
| BUTW92 | Silicon NPN Power Transistor |
