2ED28073J06F Overview
Description
The 2ED28073J06F is a high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
Key Features
- Negative VS transient immunity of 70 V, dV/dt immune
- Lower di/dt gate driver for better noise immunity
- Floating channel designed for bootstrap operation
- Operating voltages (VS node) upto + 600 V
- Maximum bootstrap voltage (VB node) of + 625 V
- Integrated bootstrap diode
- Integrated shoot-through protection with built-in dead time
- Integrated short pulse / noise rejection filter on input
- Independent under voltage lockout for both high and low side
- Schmitt trigger inputs with hysteresis
