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Infineon Technologies Electronic Components Datasheet

2ED28073J06F Datasheet

half-bridge gate driver

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2ED28073J06F
2ED28073J06F
600 V half-bridge gate driver with integrated bootstrap diode
Features
Product summary
Negative VS transient immunity of 70 V, dV/dt immune
Lower di/dt gate driver for better noise immunity
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 600 V
Maximum bootstrap voltage (VB node) of + 625 V
Integrated bootstrap diode
Integrated shoot-through protection with built-in dead time
Integrated short pulse / noise rejection filter on input
Independent under voltage lockout for both high and low side
Schmitt trigger inputs with hysteresis
3.3 V, 5 V and 15 V input logic compatible
Maximum supply voltage of 25 V
Outputs in phase with inputs
Suitable for both trapezoidal and sinusoidal motor control
Available in small footprint DSO-8
RoHS compliant
Potential applications
VS_OFFSET = 600 V max
IO+ pk / IO- pk(typ) = + 20 mA/ - 80 mA
VCC = 10 V to 20 V
Delay matching = 50 ns max.
Deadtime (typ.) = 300 ns
tON / tOFF (typ.) = 530 ns/ 530 ns
Package
8-Lead DSO-8
Driving IGBTs, enhancement mode N-Channel MOSFETs in various motor control applications.
Infineon recommendation for driving fast body diode CoolMOS™ PFD7 super junction MOSFETs and IGBTs in
Refrigeration Compressors
Air Conditioner fans
Washing Machines and dishwasher pumps
General Purpose Inverters
Micro/Mini Inverter Drives
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC78/20/22
Ordering information
Base part number
2ED28073J06F
Package type Standard pack
Form
DSO-8
Tape and Reel
Quantity
2500
Orderable part number
2ED28073J06FXUMA1
Description
The 2ED28073J06F is a high voltage, high speed power MOSFET and IGBT drivers with dependent high and low
side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic.
The output drivers feature a high-pulse current buffer stage designed for minimum driver cross-conduction. The
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Page 1 of 26
V 2.0
2020-04-23


Infineon Technologies Electronic Components Datasheet

2ED28073J06F Datasheet

half-bridge gate driver

No Preview Available !

2ED28073J06F
600V Half-Bridge gate driver with integrated bootstrap diode
floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which
operates up to 600V.
Up to 600V
VCC
VCC
VB
HIN
HIN HO
LIN
LIN
VS
COM LO
TO LOAD
Refer to lead assignments for correct pin configuration. This diagram shows electrical connections only. Please refer to our
application notes and design tips for proper circuit board layout.
Figure 1 Typical application block diagram
Datasheet
http://www.infineon.com
2 of 26
V 2.00
2020-04-23



Part Number 2ED28073J06F
Description half-bridge gate driver
Maker Infineon
Total Page 3 Pages
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