2ED28073J06F Datasheet - Infineon

half-bridge gate driver

2ED28073J06F Features

* Product summary

* Negative VS transient immunity of 70 V, dV/dt immune

* Lower di/dt gate driver for better noise immunity

* Floating channel designed for bootstrap operation

* Operating voltages (VS node) upto + 600 V

* Maximum bootstrap voltage (VB node) of + 625 V

* Inte

2ED28073J06F General Description

The 2ED28073J06F is a high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, .

2ED28073J06F Datasheet (1.82 MB)