BFR740L3 - NPN Silicon Germanium RF Transistor

Description

and charts stated herein.

Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com).

Warnings Due to technical requirements components may contain dangerous substances.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	BFR740L3
Manufacturer	Infineon
File Size	133.24 KB
Description	NPN Silicon Germanium RF Transistor
Datasheet	BFR740L3 Datasheet

📁 Similar Datasheet

BFR77 - (BFR77 / BFR79) Medium Power Amplifiers and Switches (Micro Electronics)
BFR79 - (BFR77 / BFR79) Medium Power Amplifiers and Switches (Micro Electronics)
BFR79 - PNP Silicon Transistor (Micro)
BFR10 - NPN Transistor (SGS-ATES)
BFR106 - NPN 5 GHz wideband transistor (NXP)
BFR106 - NPN Silicon RF Transistor (Siemens Semiconductor Group)
BFR106 - Low Noise Silicon Bipolar RF Transistor (Infineon Technologies AG)
BFR106 - NPN Transistor (INCHANGE)
BFR11 - NPN Transistor (SGS-ATES)
BFR14B - NPN SILICON MICROWAVE TRANSISTOR (Siemens Semiconductor Group)

Other Datasheets by Infineon

BFR740L3RH - Low Noise Silicon Germanium Bipolar RF Transistor
BFR720L3RH - NPN Silicon Germanium RF Transistor
BFR750L3RH - Linear Low Noise SiGe:C Bipolar RF Transistor
BFR193F - Low Noise Silicon Bipolar RF Transistor
BFR193L3 - NPN Bipolar RF Transistor
BFR840L3RHESD - Robust Low Noise Silicon Germanium Bipolar RF Transistor
BFR843EL3 - Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor

Full PDF Text Transcription

Click to expand full text

BFR740L3 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.8 dB at 6 GHz • High maximum stable gain Gms = 24 dB at 1.

Published: Feb 11, 2016 |