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CY15B116QN Datasheet - Infineon

CY15B116QN, 16Mb Auto Ferroelectric RAM

Functional description The EXCELON™ Auto CY15X116QN is a low power, 16-Mbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 year.
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Datasheet Details

Part number:

CY15B116QN

Manufacturer:

Infineon ↗

File Size:

325.07 KB

Description:

16Mb Auto Ferroelectric RAM

CY15B116QN Features

* 16-Mbit ferroelectric random access memory (F-RAM) logically organized as 2048K × 8 - Virtually unlimited endurance 100 trillion (1014) read/writes - 151-year data retention (see “Data retention and endurance” on page 24) - Infineon instant non-volatile write technology - Advanced high-rel

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IRF7457 Stock/Price

Distributor
Infineon Technologies AG
IRF7457TRPBF
MOSFET, Power, N-Ch, VDSS 20V, RDS(ON) 5.5 Milliohms, ID 15A, SO-8,PD 2.5W, VGS +/-20V
RS
0 In Stock
Qty : 4000 units
Unit Price : $1.7