ips / 600v gan half-bridge.
* Two 500 m GaN switches in half-bridge configuration with integrated high- and low-side gate drivers - Source / sink driving current +0.29 A / -0.7 A - Application-.
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IGI60L5050A1M combines a half-bridge power stage consisting of two 500 mΩ (typ. Rdson) / 600 V enhancementmo.
IGI60L5050A1M combines a half-bridge power stage consisting of two 500 mΩ (typ. Rdson) / 600 V enhancementmode CoolGaNTM HEMTs with integrated gate drivers in a small 6 x 8 mm TFLGA-27 package. In the low-to-medium power area (example configuration i.
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