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IMBG40R025M2H Datasheet

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Infineon · IMBG40R025M2H File Size : 1.28MB · 14 hits

Features and Benefits


• Ideal for high frequency switching and synchronous rectification
• Commutation robust fast body diode with low Qfr
• Low RDS(on) dependency on temperature
• Benchmark gate threshold voltage, VGS(th) = 4.5 V
• Recommended gate driving voltage 0 V to 18 V
• .XT interconnection technology for best‑in.

IMBG40R025M2H IMBG40R025M2H IMBG40R025M2H
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G2
MOSFET
IMBG40R025M2H
IMBG40R011M2H
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