IMBG120R017M2H mosfet equivalent, silicon carbide mosfet.
* VDSS = 1200 V at Tvj = 25°C
* IDDC = 76 A at TC = 100°C
* RDS(on) = 17.1 mΩ at VGS = 18 V, Tvj = 25°C
* Very low switching losses
* Overload opera.
* EV Charging
* Online UPS/Industrial UPS
* String inverter
* General purpose drives (GPD)
Product vali.
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