IMBG120R017M2H Datasheet - Infineon

Silicon Carbide MOSFET

* VDSS = 1200 V at Tvj = 25°C

* IDDC = 76 A at TC = 100°C

* RDS(on) = 17.1 mΩ at VGS = 18 V, Tvj = 25°C

* Very low switching losses

* Overload operation up to Tvj = 200°C

* Short circuit withstand time 2 µs

* Benchmark gate threshold voltage

IMBG120R017M2H

1.25 MB

Silicon carbide mosfet.

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IMBG120R017M2H Silicon Carbide MOSFET Infineon

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