IPT026N12NM6 MOSFET
• N‑channel, normal level
• Very low on‑resistance RDS(on)
• Excellent gate charge x RDS(on) product (FOM)
• Very low reverse recovery charge (Qrr)
• .
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS
120
V
RDS(on),max
2.6
mΩ
ID
224
A
Qoss
166
n.
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