logo

PTF080601A Datasheet, Infineon Technologies AG

PTF080601A mhz equivalent, ldmos rf power field effect transistor 60 w/ 860-960 mhz.

PTF080601A Avg. rating / M : 1.0 rating-111

datasheet Download

PTF080601A Datasheet

Features and benefits


*
* Broadband internal matching Typical EDGE performance - Average output power = 30 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at .

Application

in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Typical EDGE Modu.

Image gallery

PTF080601A Page 1 PTF080601A Page 2 PTF080601A Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts