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PTF080901 Datasheet, Infineon Technologies AG

PTF080901 Datasheet, Infineon Technologies AG

PTF080901

datasheet Download (Size : 205.95KB)

PTF080901 Datasheet

PTF080901 mhz equivalent, ldmos rf power field effect transistor 90 w/ 869-960 mhz.

PTF080901

datasheet Download (Size : 205.95KB)

PTF080901 Datasheet

Features and benefits


*
* Broadband internal matching Typical EDGE performance - Average output power = 45 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at .

Application

in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features
* <.

Description

The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features
*
* Broadband internal matching T.

Image gallery

PTF080901 Page 1 PTF080901 Page 2 PTF080901 Page 3

TAGS

PTF080901
LDMOS
Power
Field
Effect
Transistor
869-960
MHz
Infineon Technologies AG

Manufacturer


Infineon (https://www.infineon.com/) Technologies AG

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