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ITBH09200B2 - High Power RF LDMOS FET

Datasheet Summary

Description

The ITBH09200B is a 200-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Typical Sing

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operati.

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Datasheet preview – ITBH09200B2

Datasheet Details

Part number ITBH09200B2
Manufacturer Innogration
File Size 974.16 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITBH09200B2 Datasheet
Additional preview pages of the ITBH09200B2 datasheet.

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. Document Number: ITBH09200B Product Datasheet V2.0 700MHz-1000MHz, 200W, 28V High Power RF LDMOS FETs Description The ITBH09200B is a 200-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITBH09200B2 Typical Single-Carrier W-CDMA Performance: VDD=28Volts, IDQ= 1000 mA, Pout= 40 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gp (dB) D (%) ACPR5M (dBc) ACPR10M (dBc) 920 MHz 19.9 26.4 -38.5 -55.4 960 MHz 20.3 28.8 -39.2 -56.4 875 MHz 19.7 26.
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