ITBH09200B2
Description
The ITBH09200B is a 200-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz.
Key Features
- High Efficiency and Linear Gain Operations
- Integrated ESD Protection
- Internally Matched for Ease of Use
- Excellent thermal stability, low HCI drift
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
- pliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC Table
- Characteristic - ESD Protection Characteristics Test Methodology Symbol VDSS VGS VDD Tstg TC TJ Symbol RJC Value 75
- 10 to +10 +32
- ITBH09200B Test Circuit ponent Designations and Values ponent
