Description
l l
IRF1010NSPbF IRF1010NLPbF
HEXFET® Power MOSFET
D
PD - 95103
VDSS = 55V RDS(on) = 11mΩ
G S
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package.The D2Pak is suitable for high current applications because of its low internal connection r
Features
- +
RG VGS.
- dv/dt controlled by RG.
- ISD controlled by Duty Factor "D".
- D. U. T. - Device Under Test
+ VDD.
- Reverse Polarity of D. U. T for P-Channel
http://www. DataSheet4U. net/
Driver Gate Drive P. W. Period D=
P. W. Period
[VGS=10V ].
- D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
[.