Datasheet Details
- Part number
- IRF1010NL
- Manufacturer
- International Rectifier
- File Size
- 146.83 KB
- Datasheet
- IRF1010NL_InternationalRectifier.pdf
- Description
- Power MOSFET
IRF1010NL Description
PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanch.
l l
HEXFET® Power MOSFET
D
IRF1010NS IRF1010NL
VDSS = 55V RDS(on) = 11mΩ
G S
Advanced HEXFET ® Power MOSFETs from International Rectifier utilize.
IRF1010NL Features
* t
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
[ ISD]
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs
www. irf. com
7
IRF1010NS/IRF1010NL
D2Pak Package Outline
10.54 (.415) 10.29 (.405) 1.40 (.055) M
IRF1010NL Applications
* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection
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