IRF1010NSPBF Datasheet, Mosfet, International Rectifier

IRF1010NSPBF Features

• Mosfet 2 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.1 0.01 0.00001 t1 , Rectangular Pulse Du

PDF File Details

Part number:

IRF1010NSPBF

Manufacturer:

International Rectifier

File Size:

359.04kb

Download:

📄 Datasheet

Description:

Power mosfet. l l IRF1010NSPbF IRF1010NLPbF HEXFET® Power MOSFET D PD - 95103 VDSS = 55V RDS(on) = 11mΩ G S Absolute Maximum Ratings ID @ TC =

IRF1010NSPBF Application

• Applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole

TAGS

IRF1010NSPBF

International Rectifier

📁 Related Datasheet

IRF1010NS - Power MOSFET (International Rectifier)
PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanch.

IRF1010NS - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive .

IRF1010N - Power MOSFET (International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching G l Fully Avalanch.

IRF1010N - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010N， IIRF1010N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement .

IRF1010NL - Power MOSFET (International Rectifier)
PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanch.

IRF1010NLPBF - Power MOSFET (International Rectifier)
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Le.

IRF1010NPBF - Power MOSFET (International Rectifier)
PD - 94966 IRF1010NPbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature .

IRF1010 - N-Channel Power MOSFET (nELL)
SEMICONDUCTOR IRF1010 Series N-Channel Power MOSFET (84A, 60Volts) D D RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF1010 is a three.

IRF1010E - Power MOSFET (International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R.

IRF1010E - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1010E， IIRF1010E ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement .