Datasheet Details
Part number:
IRF1010N
Manufacturer:
International Rectifier
File Size:
225.89 KB
Description:
Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extrem
IRF1010N_InternationalRectifier.pdf
IRF1010N, Power MOSFET
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des
IRF1010N Distributor
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