IRF1010N

Power MOSFET

International Rectifier

IRF1010N General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

IRF1010N Datasheet (225.89 KB)

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IRF1010N

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International Rectifier

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225.89 KB

Description:

Power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching G l Fully Avalanch.

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IRF1010N Power MOSFET International Rectifier

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IRF1010N General Description

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