IRF1010NPBF Datasheet, Mosfet, International Rectifier

IRF1010NPBF Features

• Mosfet QG 12V .2µF .3µF VGS QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 w

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IRF1010NPBF

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International Rectifier

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📄 Datasheet

Description:

Power mosfet. l l D VDSS = 55V RDS(on) = 11mΩ G S ID = 85A‡ Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced proce

IRF1010NPBF Application

• Applications The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50

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IRF1010NPBF

International Rectifier

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