IRF1010NS Datasheet - International Rectifier

IRF1010NS Power MOSFET

l l HEXFET® Power MOSFET D IRF1010NS IRF1010NL VDSS = 55V RDS(on) = 11mΩ G S Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge.

IRF1010NS Features

* t [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD]

* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRF1010NS/IRF1010NL D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M

IRF1010NS_InternationalRectifier.pdf