Datasheet Details
Part number:
IRF1010NS
Manufacturer:
International Rectifier
File Size:
146.83 KB
Description:
Power MOSFET
Features
* t [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD]
* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRF1010NS/IRF1010NL D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M
IRF1010NS_InternationalRectifier.pdf
IRF1010NS, Power MOSFET
l l HEXFET® Power MOSFET D IRF1010NS IRF1010NL VDSS = 55V RDS(on) = 11mΩ G S Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and rugge
IRF1010NS Distributor
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