IRF1010NS

Power MOSFET

International Rectifier

IRF1010NS Features

* t [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% [ ISD]

* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRF1010NS/IRF1010NL D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) M

IRF1010NS General Description

l l HEXFET® Power MOSFET D IRF1010NS IRF1010NL VDSS = 55V RDS(on) = 11mΩ G S Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugge.

IRF1010NS Datasheet (146.83 KB)

IRF1010NS Datasheet Preview — Preview of IRF1010NS PDF

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IRF1010NS

Manufacturer:

International Rectifier

File Size:

146.83 KB

Description:

Power mosfet.
PD - 94171 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanch.

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IRF1010NS Power MOSFET International Rectifier

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IRF1010NS Features

IRF1010NS General Description

Datasheet Details

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