power mosfet.
.6 0 (.4 57 ) 1 1.4 0 (.4 49 )
1 5.4 2 (.6 0 9 ) 1 5.2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )
TR L
1 0.9 0 (.4 2 9 ) 1 0.7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2.
because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.Th.
Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and costeffectiveness. The D2Pak is a surface mount power package capable of accommo.
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