0.001 0.01 0.1 1 10 100 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient ww.

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .

The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is.

IRF6610

IRF6611

IRF6611PbF

IRF6611TRPbF

IRF6612PbF

IRF6612TR1

IRF6613

IRF6613PBF

IRF6613TRPBF

IRF6614

IRF6614PBF

IRF6614TRPBF

IRF6616