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IRF6611TRPbF, IRF6611PbF DirectFET Power MOSFET

IRF6611TRPbF Description

PD - 97216 IRF6611PbF IRF6611TRPbF www.DataSheet4U.com RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l .
The IRF6611PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.

IRF6611TRPbF Features

* rce Voltage (V) VGS(th) Gate threshold Voltage (V) 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 ID, Drain Current (A) ID = 50µA T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temp

IRF6611TRPbF Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRF6611TRPbF, IRF6611PbF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRF6611TRPbF, IRF6611PbF
Manufacturer
International Rectifier
File Size
288.60 KB
Datasheet
IRF6611PbF_InternationalRectifier.pdf
Description
DirectFET Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRF6611TRPbF, IRF6611PbF.
Please refer to the document for exact specifications by model.

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DirectFET Power MOSFET International Rectifier
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