Datasheet Details
- Part number
- IRF6610
- Manufacturer
- International Rectifier
- File Size
- 266.29 KB
- Datasheet
- IRF6610_InternationalRectifier.pdf
- Description
- HEXFET Power MOSFET Silicon Technology
IRF6610 Description
PD - 97012 www.DataSheet4U.com IRF6610 RDS(on) Qoss 5.9nC DirectFET™ Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free.
The IRF6610 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.
IRF6610 Features
* ypical Source-Drain Diode Forward Voltage
70 60
ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0 ID = 250µA
1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature (
IRF6610 Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t
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