IRF6610 Datasheet - International Rectifier

IRF6610, HEXFET Power MOSFET Silicon Technology

PD - 97012 www.DataSheet4U.com IRF6610 RDS(on) Qoss 5.9nC DirectFET™ Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free.
The IRF6610 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

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Datasheet Details

Part number:

IRF6610

Manufacturer:

International Rectifier

File Size:

266.29 KB

Description:

HEXFET Power MOSFET Silicon Technology

Features

* ypical Source-Drain Diode Forward Voltage 70 60 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature (

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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IRF6610 HEXFET Power MOSFET Silicon Technology International Rectifier

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