IRF6610 Datasheet - International Rectifier

HEXFET Power MOSFET Silicon Technology

IRF6610 Features

* ypical Source-Drain Diode Forward Voltage 70 60 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature (

IRF6610 General Description

The IRF6610 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6610 Datasheet (266.29 KB)

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IRF6610

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International Rectifier

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266.29 KB

Description:

Hexfet power mosfet silicon technology.
PD - 97012 www.DataSheet4U.com IRF6610 RDS(on) Qoss 5.9nC DirectFET™ Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free.

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IRF6610 HEXFET Power MOSFET Silicon Technology International Rectifier

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IRF6610 Features

IRF6610 General Description

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