Description
PD - 97216 IRF6611PbF IRF6611TRPbF www.DataSheet4U.com RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l .
The IRF6611PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.
Features
* rce Voltage (V)
VGS(th) Gate threshold Voltage (V)
140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150
ID, Drain Current (A)
ID = 50µA
T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temp
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma