IRF6612PbF Datasheet - International Rectifier

IRF6612PbF MOSFET

The IRF6612PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques PD - 97215 IRF6612PbF IRF661TRPbF DirectFET™ Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 2.5mΩ@ 10V 3.4mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 30nC 10nC 2.9nC 8.1n.

IRF6612PbF Features

* RF6612PbF Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF D.U.T. + -VDS VGS 3mA IG ID Current Sampling Resistors Fig 14a. Gate Charge Test Circuit Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 14b. Gate Charge Waveform 15V VDS L VRGGS 20V tp D.U.T IAS 0.01Ω DRIVER + - VD

IRF6612PbF-InternationalRectifier.pdf