IRF6611PbF Datasheet - International Rectifier

IRF6611PbF DirectFET Power MOSFET

The IRF6611PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

PD - 97216 IRF6611PbF IRF6611TRPbF www.DataSheet4U.com RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 12nC RDS(on) Qgs2 3.3nC RDS(on) Qoss 23nC 30V max ±20V max.

IRF6611PbF Features

* rce Voltage (V) VGS(th) Gate threshold Voltage (V) 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 100 125 150 ID, Drain Current (A) ID = 50µA T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temp

IRF6611PbF Datasheet (288.60 KB)