IRF6613 HEXFET Power MOSFET

International Rectifier

Description

PD - 95881 IRF6613 l l l l l l l Application Specific MOSFETs Ideal for Synchronous Rectification in Isolated DC-DC Converters Low Conduction Losses.
The IRF6613 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

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Datasheet Specifications

Part number: IRF6613
Manufacturer: International Rectifier
File Size: 233.62 KB
Datasheet: IRF6613_InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Features

* Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform www. irf. com 5 IRF6613 D. U. T Driver Gate Drive + P. W. Period D= P. W. Period VGS=10V
* + Circuit Layout Considerations
* Low Stray Inductance

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best t

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IRF6613 HEXFET Power MOSFET International Rectifier

International Rectifier IRF6613-like datasheet