IRF6613 Datasheet (International Rectifier)

IRF6613, HEXFET Power MOSFET

The IRF6613 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used i

IRF6613 Features

* Vgs(th) IG ID Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform www.irf.com 5 IRF6613 D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V

* + Circuit Layout Considerations

* Low Stray Inductance