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IRF6612PbF - MOSFET

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General Description

The IRF6612PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.

Application note AN-1035 is followed regarding the manufacturing methods and processes.

Overview

RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques PD - 97215 IRF6612PbF IRF661TRPbF DirectFET™ Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 2.5mΩ@ 10V 3.4mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 30nC 10nC 2.9nC 8.1nC 18nC 1.8V Applicable DirectFET Package/Layout Pad (see p.

Key Features

  • RF6612PbF Current Regulator Same Type as D. U. T. 50KΩ 12V .2µF .3µF D. U. T. + -VDS VGS 3mA IG ID Current Sampling Resistors Fig 14a. Gate Charge Test Circuit Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 14b. Gate Charge Waveform 15V VDS L VRGGS 20V tp D. U. T IAS 0.01Ω DRIVER + - VDD A Fig 15a. Unclamped Inductive Test Circuit LD VDS + VDD - VGS Pulse Width < 1µs Duty Factor < 0.1% D. U. T Fig 16a. Switching Time Test Circuit 6 V(BR)DSS tp IAS Fig 15b. Unclamped Inductive W.

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