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IRF6612TR1 - HEXFET Power MOSFET

Datasheet Summary

Description

The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • ry dv/dt ‚ - -.
  • +  RG.
  • dv/dt controlled by RG Driver same type as D. U. T. I SD controlled by Duty Factor "D" D. U. T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD.
  • VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 16. Gate Charge Waveform www. irf. com 7 I.

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Full PDF Text Transcription

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PD - 95842 IRF6612/IRF6612TR1 VDSS l HEXFET® Power MOSFET Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques 30V 3.3mΩ@VGS = 10V 4.4mΩ@VGS = 4.5V RDS(on) max Qg(typ.) 30nC MX Applicable DirectFET Package/Layout Pad (see p.8,9 for details) SQ SX ST MQ MX MT DirectFET ™ ISOMETRIC Description The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
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