IRF6612TR1 Datasheet - International Rectifier

HEXFET Power MOSFET

IRF6612TR1 Features

* ry dv/dt - -

* + RG

* dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD VDD + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD

* VGS = 5V

IRF6612TR1 General Description

The IRF6612 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used i.

IRF6612TR1 Datasheet (200.07 KB)

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Datasheet Details

Part number:

IRF6612TR1

Manufacturer:

International Rectifier

File Size:

200.07 KB

Description:

Hexfet power mosfet.
PD - 95842 IRF6612/IRF6612TR1 VDSS l HEXFET® Power MOSFET Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losse.

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IRF6612TR1 HEXFET Power MOSFET International Rectifier

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IRF6612TR1 Features

IRF6612TR1 General Description

Datasheet Details

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