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IRF6635PbF - DirectFET Power MOSFET

Description

The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • rward Voltage 200 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250µA 175 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID, Drain Current (A) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 900 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Threshold Voltage vs. Temperature 800 700 600 500 400 300 200 100 0 25 50 75 ID 9.1A 11A B.

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PD - 97086 IRF6635PbF IRF6635TRPbF www.DataSheet4U.com l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 17nC RDS(on) Qgs2 4.7nC RDS(on) Qoss 29nC 30V max ±20V max 1.3mΩ@ 10V 1.8mΩ@ 4.5V Qrr 48nC Vgs(th) 1.8V 47nC MX Applicable DirectFET Outline and Substrate Outline (see p.
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