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IRF6635TRPbF

DirectFET Power MOSFET

IRF6635TRPbF Features

* rward Voltage 200 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250µA 175 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID, Drain Current (A) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C

IRF6635TRPbF General Description

The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6635TRPbF Datasheet (268.39 KB)

Preview of IRF6635TRPbF PDF

Datasheet Details

Part number:

IRF6635TRPbF

Manufacturer:

International Rectifier

File Size:

268.39 KB

Description:

Directfet power mosfet.
PD - 97086 IRF6635PbF IRF6635TRPbF www.DataSheet4U.com l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Speci.

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IRF6635TRPbF DirectFET Power MOSFET International Rectifier

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