IRF6631 Datasheet - International Rectifier

IRF6631 DirectFET Power MOSFET

The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used.

PD - 97183 www.DataSheet4U.com IRF6631 RDS(on) Qoss 7.3nC DirectFET Power MOSFET Typical values (unless otherwise specified) l l l l l l l l l RoHS compliant containing no lead or bromide Low Profile (<0.6 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET applications Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques VDSS Qg tot V.

IRF6631 Features

* = 150°C Single Pulse 0.0 0.1 1.0 10 100 0.1 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 50 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperatur

IRF6631_InternationalRectifier.pdf