IRF6631 Datasheet - International Rectifier

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IRF6631 DirectFET Power MOSFET

PD - 97183 www.DataSheet4U.com IRF6631 RDS(on) Qoss 7.3nC DirectFET Power MOSFET Typical values (unless otherwise specified) l l l l l l l l l R.
The IRF6631 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

IRF6631_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF6631

Manufacturer:

International Rectifier

File Size:

265.98 KB

Description:

DirectFET Power MOSFET

Features

* = 150°C Single Pulse 0.0 0.1 1.0 10 100 0.1 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 60 50 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperatur

Applications

* Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques VDSS Qg tot VGS Qgd 4.4nC RDS(on) Qgs2 1.1nC 30V max ±20V max 6.0mΩ @ 10V 8.3mΩ @ 4.5V Qrr 10nC Vgs(th) 1.8V 12nC SQ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST

IRF6631 Distributors

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IRF6631 DirectFET Power MOSFET International Rectifier

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