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IRF6631TRPBF, IRF6631PBF Datasheet - International Rectifier

IRF6631PBF-InternationalRectifier.pdf

This datasheet PDF includes multiple part numbers: IRF6631TRPBF, IRF6631PBF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IRF6631TRPBF, IRF6631PBF

Manufacturer:

International Rectifier

File Size:

271.80 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IRF6631TRPBF, IRF6631PBF.
Please refer to the document for exact specifications by model.

IRF6631TRPBF, IRF6631PBF, Power MOSFET

The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries u

PD - 97217 DirectFET™ Power MOSFET ‚ RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Switching and Conduction Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l IRF6631PbF IRF6631TRPbF RDS(on) Qgs2 1.1nC Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 4.4nC RDS(on) Qoss 7.3nC 30V max ±20V max 6.0mΩ @ 10V 8.3mΩ @ 4.5V Q

IRF6631TRPBF Features

* ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 50µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Tempe

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