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IRF6631TRPBF

Power MOSFET

IRF6631TRPBF Features

* ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 50µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Tempe

IRF6631TRPBF General Description

The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries u.

IRF6631TRPBF Datasheet (271.80 KB)

Preview of IRF6631TRPBF PDF

Datasheet Details

Part number:

IRF6631TRPBF

Manufacturer:

International Rectifier

File Size:

271.80 KB

Description:

Power mosfet.
PD - 97217 DirectFET™ Power MOSFET ‚ RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core .

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IRF6631TRPBF Power MOSFET International Rectifier

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