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IRF6633APbF

Power MOSFET

IRF6633APbF Features

* 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 240 200 160 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 1.45A 1.8A BOTTOM 13A 120 80 40 www.irf.

IRF6633APbF General Description

The IRF6633APbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6633APbF Datasheet (259.56 KB)

Preview of IRF6633APbF PDF

Datasheet Details

Part number:

IRF6633APbF

Manufacturer:

International Rectifier

File Size:

259.56 KB

Description:

Power mosfet.
l RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Lo.

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IRF6633APbF Power MOSFET International Rectifier

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