IRF6633APbF Datasheet (International Rectifier)

IRF6633APbF, Power MOSFET

The IRF6633APbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used

l RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques PD - 97122A IRF6633APbF IRF6633ATRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 20V max ±20V max 4.1mΩ@ 10V 7.0mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vg

IRF6633APbF Features

* 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 240 200 160 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 1.45A 1.8A BOTTOM 13A 120 80 40 www.irf.