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IRF6633PBF

Power MOSFET

IRF6633PBF Features

* ltage Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature ( °C ) Fig 12. Maximum Drain

IRF6633PBF General Description

The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used .

IRF6633PBF Datasheet (298.36 KB)

Preview of IRF6633PBF PDF

Datasheet Details

Part number:

IRF6633PBF

Manufacturer:

International Rectifier

File Size:

298.36 KB

Description:

Power mosfet.
PD - 97083 DirectFET™ Power MOSFET ‚ RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core .

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TAGS

IRF6633PBF Power MOSFET International Rectifier

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