IRF6633PBF Datasheet (International Rectifier)

IRF6633PBF, Power MOSFET

The IRF6633PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used

PD - 97083 DirectFET Power MOSFET RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l IRF6633PbF IRF6633TRPbF RDS(on) RDS(on) Typical values (unless otherwise specified) VDSS VGS 20V max ±20V max 4.1mΩ @ 10V 7.0mΩ @ 4.5V Qg tot Qgd 4.0nC Qgs2 1.2nC Qr

IRF6633PBF Features

* ltage Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature ( °C ) Fig 12. Maximum Drain