IRF6631PBF - Power MOSFET

International Rectifier

IRF6631PBF Datasheet Preview — Preview of IRF6631PBF PDF

Datasheet Details

Part number	IRF6631PBF
Manufacturer	International Rectifier ↗
File Size	271.80 KB
Description	Power MOSFET
Datasheet	IRF6631PBF-InternationalRectifier.pdf

IRF6631PBF Product details

Description

The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile.

Features

ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 50µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 60 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 3.1A 4.5A BOTTOM 10A 50 40 30 20 10 0 25 50 75 100 125 150 Starting T J , Jun.

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Published: Apr 1, 2014 |