IRF6635PbF Datasheet (International Rectifier)

IRF6635PbF, DirectFET Power MOSFET

The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used

PD - 97086 IRF6635PbF IRF6635TRPbF www.DataSheet4U.com l l l l l l l l l RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 17nC RDS(on) Qgs2 4.7nC RDS(on) Qoss 29nC 30V max ±20V max

IRF6635PbF Features

* rward Voltage 200 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250µA 175 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID, Drain Current (A) -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C