IRF6636 Datasheet - International Rectifier

DirectFET Power MOSFET

IRF6636 Features

* Source-Drain Diode Forward Voltage 90 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50µA VDS, Drain-to-Source Voltage (V) 80 70 ID, Drain Current (A) 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) -75 -5

IRF6636 General Description

The IRF6636 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6636 Datasheet (262.15 KB)

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IRF6636

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International Rectifier

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262.15 KB

Description:

Directfet power mosfet.
PD - 96977B www.DataSheet4U.com IRF6636 DirectFET™ Power MOSFET Typical values (unless otherwise specified) RoHS compliant containing no lead or br.

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IRF6636 DirectFET Power MOSFET International Rectifier

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IRF6636 Features

IRF6636 General Description

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