Description
The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile.
Features
- .7 VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
180 160 140
ID, Drain Current (A)
Fig 11. Maximum Safe Operating Area
2.5
Typical VGS(th) Gate threshold Voltage (V)
120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C)
2.0
ID = 10mA
1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
1600
EAS , Single Pulse Avalanche Energy (mJ)
Fig.
IRF6894MTRPBF Datasheet
