IRF6893MPbF Datasheet | International Rectifier

IRF6893MPb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and less than 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6893MPb F balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6893MPb F has been optimized for parameters that are critical in synchronous buck converter’s Sync FET sockets. Absolute Maximum Ratings Parameter Max. Units VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS Drain-to-Source Voltage Gate-to-Source Voltage e Continuous Drain Current, VGS @ 10V e Continuous Drain Current, VGS @ 10V f Continuous Drain Current, VGS @ 10V g Pulsed Drain Current h Single Pulse Avalanche Energy Ãg Avalanche Current 25 V ±16 29 23 A 168 230 370 m J 23 A Typical RDS(on) (m) VGS, Gate-to-Source Voltage (V) 5 ID = 29A 3 TJ = 125°C 1 TJ = 25°C 0 0 2 4 6 8 10 12 14 16 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the Direct FET Website. - Surface mounted on 1 in....