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IRF6894MTRPbF - Power MOSFET

Download the IRF6894MTRPbF datasheet PDF (IRF6894MPbF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

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Note: The manufacturer provides a single datasheet file (IRF6894MPbF-Infineon.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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IRF6894MPbF IRF6894MTRPbF HEXFET® Power MOSFET plus Schottky Diode RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) Integrated Monolithic Schottky Diode Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible  25V min ±16V max 0.9m@ 10V 1.4m@ 4.5V Low Package Inductance Optimized for High Frequency Switching Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for CPU Core DC-DC Converters 31nC 10nC 3.0nC 58nC 33nC 1.6V Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  100% Rg tested S Footprint compatible to DirectFET DG D S Applicable DirectFET™ Outline and Substrate Outline (see p.
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