IRF6898MPBF Datasheet | International Rectifier

HEXFET® Power MOSFET plus Schottky Diode ‚ l Ro Hs pliant Containing No Lead and Bromide ‚ l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) l Dual Sided Cooling patible  l Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l patible with existing Surface Mount Techniques  l 100% Rg tested IRF6898MPb F IRF6898MTRPb F RDS(on) RDS(on) Typical values (unless otherwise specified) VDSS 25V max ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V Qg tot Q gd 15n C Qgs2 4.7n C Qrr 66n C Q oss 43n C Vgs(th) 1.6V 41n C S D G S D Applicable Direct FET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Direct FET ™ ISOMETRIC Description The IRF6898MPb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6898MPb F balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6898MPb F has been optimized...