Description
The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- C 1 Ta = 25°C Tj = 150°C Single Pulse 0.1 0.01 0.1 1 10 100
10
T J = 150°C T J = 25°C T J = -40°C VGS = 0V
1 0.1 0.4 0.7 1.0 VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
225 200 175
ID, Drain Current (A)
Fig 11. Maximum Safe Operating Area
2.5
Typical VGS(th) Gate threshold Voltage (V)
150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0
ID = 10mA
1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150 T.
IRF6898MPBF-InternationalRectifier.pdf
