Datasheet Details
| Part number | IRF6898MTRPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 260.67 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF6898MTRPBF Datasheet
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General Description
The IRF6898MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Key Features
- C 1 Ta = 25°C Tj = 150°C Single Pulse 0.1 0.01 0.1 1 10 100 10 T J = 150°C T J = 25°C T J = -40°C VGS = 0V 1 0.1 0.4 0.7 1.0 VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 225 200 175 ID, Drain Current (A) Fig 11. Maximum Safe Operating Area 2.5 Typical VGS(th) Gate threshold Voltage (V) 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 10mA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T.
