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IRG7PG42UDPBF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

Overview

  IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

  •  Low VCE (ON) trench IGBT technology.
  •  Low switching losses.
  •  Square RBSOA.
  •  100% of the parts tested for ILM.
  •  Positive VCE (ON) temperature co-efficient.
  •  Ultra fast soft recovery co-pak diode.
  •  Tight parameter distribution.
  •  Lead-free package Benefits.
  •  High efficiency in a wide range of.